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BJT as a Switch

Week 4 — Transistors
CUTOFF
IB0 mA
IC0 mA
IE0 mA
VCE0 V
P0 mW
Tj25 °C
Circuit Diagram
Base
Collector
Emitter
Transistor Type
Load Circuit
Switching Input
Transistor
Input Waveform
BJT Parameters (Silicon)
VBE(on) = 0.7 V  •  VCE(sat) = 0.2 V
RθJA = 200 °C/W (TO-92)  •  Tamb = 25 °C
Based on common BJTs (2N2222, 2N3904 / 2N3906)
Currents vs Time
IB
IC
IE
Vin
IC vs VCE Characteristic
Saturation
Active
Cutoff
Load line